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Electrical conductance and magnetoconductance effect on n-type porous silicon: Contribution of weak localization correction

Electrical conductance and magnetoconductance effect on n-type porous silicon: Contribution of weak localization correction

Chouaibi, B.; Radaoui, M.; Ben Fredj, A.; Romdhane, S.; Bouaïcha, M.; Bouchriha, H.
  • 期刊名称Superlattices and Microstructures
  • 作者Chouaibi, B.; Radaoui, M.; Ben Fredj, A.; Romdhane, S.; Bouaïcha, M.; Bouchriha, H.
  • 卷第85卷
  • 印刷ISSN0749-6036
  • 文件大小1337.54KB
  • 发表时间2015-09
  • DOI10.1016/j.spmi.2015.06.042
  • 页码680-689
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