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Study of Si kinetics in interfacial SiO
<sub/>2</sub>
scavenging in HfO
<sub/>2</sub>
gate stacks

Study of Si kinetics in interfacial SiO ₂ scavenging in HfO ₂ gate stacks

Li, Xiuyan; Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira

期刊名称Applied Physics Express
作者Li, Xiuyan; Yajima, Takeaki; Nishimura, Tomonori; Toriumi, Akira
卷第8卷
期第6期
印刷ISSN1882-0778
电子ISSN1882-0786
文件大小5623.03KB
发表时间2015-06-01
DOI10.7567/apex.8.061304

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