Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Yonezawa, Yoshiyuki; Mizushima, Tomonori; Takenaka, Kensuke; Fujisawa, Hiroyuki; Deguchi, T.; Kato, Tomohisa; Harada, Shinsuke; Tanaka, Yasunori; Okamoto, Dai; Sometani, Mitsuru; Okamoto, M.; Yoshikawa, M.; Tsutsumi, T.; Sakai, Y.; Kumagai, N.; Matsunaga, S.; Takei, M.; Arai, Masayuki; Hatakeyama, T.; Takao, K.; Shinohe, T.; Izumi, T.; Hayashi, T.; Nakayama, K.; Asano, K.; Miyajima, M.; Kimura, H.; Otsuki, A.; Fukuda, K.; Okumura, H.; Kimoto, T.

期刊名称Materials Science Forum
作者Yonezawa, Yoshiyuki; Mizushima, Tomonori; Takenaka, Kensuke; Fujisawa, Hiroyuki; Deguchi, T.; Kato, Tomohisa; Harada, Shinsuke; Tanaka, Yasunori; Okamoto, Dai; Sometani, Mitsuru; Okamoto, M.; Yoshikawa, M.; Tsutsumi, T.; Sakai, Y.; Kumagai, N.; Matsunaga, S.; Takei, M.; Arai, Masayuki; Hatakeyama, T.; Takao, K.; Shinohe, T.; Izumi, T.; Hayashi, T.; Nakayama, K.; Asano, K.; Miyajima, M.; Kimura, H.; Otsuki, A.; Fukuda, K.; Okumura, H.; Kimoto, T.
电子ISSN1662-9752
文件大小550.47KB
发表时间2015-6
DOI10.4028/www.scientific.net/MSF.821-823.842
页码842-846

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Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs