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Effects of buffered HF cleaning on metal–oxide–semiconductor interface properties of Al
<sub/>2</sub>
O
<sub/>3</sub>
/InAs/GaSb structures

Effects of buffered HF cleaning on metal–oxide–semiconductor interface properties of Al ₂ O ₃ /InAs/GaSb structures

Nishi, Koichi; Yokoyama, Masafumi; Yokoyama, Haruki; Hoshi, Takuya; Sugiyama, Hiroki; Takenaka, Mitsuru; Takagi, Shinichi

期刊名称Applied Physics Express
作者Nishi, Koichi; Yokoyama, Masafumi; Yokoyama, Haruki; Hoshi, Takuya; Sugiyama, Hiroki; Takenaka, Mitsuru; Takagi, Shinichi
卷第8卷
期第6期
印刷ISSN1882-0778
电子ISSN1882-0786
文件大小2122.17KB
发表时间2015-06-01
DOI10.7567/APEX.8.061203

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