Characterization of Sn-doped β-Ga2O3 films deposited on MgO (100) substrate by MOCVD

• 期刊名称Journal of Materials Science: Materials in Electronics
• 作者Mi, Wei; Ma, Jin; Li, Zhao; Luan, Caina; Xiao, Hongdi
• 卷第26卷
• 期第10期
• 印刷ISSN0957-4522
• 电子ISSN1573-482X
• 文件大小1805.52KB
• 发表时间2015-10
• DOI10.1007/s10854-015-3440-2
• 页码7889-7894