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[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA<sup>†</sup>

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Electro-thermal simulation of 1200 V 4H-SiC MOSFET short-circuit SOA^†

Duong, T. H.; Ortiz, J. M.; Berning, D. W.; Hefner, A. R.; Ryu, S.-H.; Palmour, J. W.

作者Duong, T. H.; Ortiz, J. M.; Berning, D. W.; Hefner, A. R.; Ryu, S.-H.; Palmour, J. W.
文件大小810.05KB
发表时间2015
DOI10.1109/ISPSD.2015.7123428
页码217-220

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