A new 4H-SiC hydrogen sensor with oxide ramp termination
- 期刊名称Materials Science in Semiconductor Processing
- 作者Pascu, Razvan; Kusko, Mihaela; Craciunoiu, Florea; Pristavu, Gheorghe; Brezeanu, Gheorghe; Badila, Marian; Avramescu, Viorel
- 印刷ISSN1369-8001
- 文件大小1028.27KB
- 发表时间2015-8
- DOI10.1016/j.mssp.2015.08.019
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