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[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Integrated modeling platform for High-k/alternate channel material heterostructure stacks

[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Integrated modeling platform for High-k/alternate channel material heterostructure stacks

Vaidya, Dhirendra; Hegde, Arjun; Lodha, Saurabh; Ganguly, Swaroop; Nainani, Aneesh; Yoshida, Naomi; Guarini, Theresa
  • 作者Vaidya, Dhirendra; Hegde, Arjun; Lodha, Saurabh; Ganguly, Swaroop; Nainani, Aneesh; Yoshida, Naomi; Guarini, Theresa
  • 文件大小580.51KB
  • 发表时间2015
  • DOI10.1109/SISPAD.2015.7292341
  • 页码389-392
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