[IEEE 2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Sendai, Japan (2015.8.26-2015.8.28)] 2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Highly linear high isolation SPDT switch IC with back-gate effect and floating body technique in 180-nm CMOS
Xu, Xiao; Yang, Xin; Sun, Zheng; Kurniawan, Taufiq Alif; Yoshimasu, Toshihiko
- 作者Xu, Xiao; Yang, Xin; Sun, Zheng; Kurniawan, Taufiq Alif; Yoshimasu, Toshihiko
- 文件大小481.35KB
- 发表时间2015
- DOI10.1109/rfit.2015.7377902
- 页码106-108