[IEEE 2015 International Conference on Optoelectronics and Microelectronics (ICOM) - Changchun, China (2015.7.16-2015.7.18)] 2015 International Conference on Optoelectronics and Microelectronics (ICOM) - Fabrication and photo-voltaic measurements of a 210-nm-period GaN-based surface nano-structure photodetector
Pu, Taofei; Zhang, Jing; Qiao, Zhongliang; Naoi, Yoshiki; Sakai, Shiro; Zhang, Jing; Naoi, Yoshiki; Saka, Shiro
- 作者Pu, Taofei; Zhang, Jing; Qiao, Zhongliang; Naoi, Yoshiki; Sakai, Shiro; Zhang, Jing; Naoi, Yoshiki; Saka, Shiro
- 文件大小648.30KB
- 发表时间2015
- DOI10.1109/icoom.2015.7398844
- 页码365-368