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Novel high-current density GaN-based normally off transistor with tensile-strained quaternary InAlGaN barrier

Kajitani, Ryo; Tanaka, Kenichiro; Ogawa, Masahiro; Ishida, Hidetoshi; Ishida, Masahiro; Ueda, Tetsuzo

期刊名称Japanese Journal of Applied Physics
作者Kajitani, Ryo; Tanaka, Kenichiro; Ogawa, Masahiro; Ishida, Hidetoshi; Ishida, Masahiro; Ueda, Tetsuzo
卷第54卷
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小1578.03KB
发表时间2015-04-01
DOI10.7567/JJAP.54.04DF09