Carrier confinement effect-driven channel design and achievement of robust electrical/photostability and high mobility in oxide thin-film transistors
- 期刊名称J. Mater. Chem. C
- 作者Ahn, Cheol Hyoun; Cho, Hyung Koun; Kim, Hyoungsub
- 印刷ISSN2050-7526
- 电子ISSN2050-7534
- 文件大小3340.18KB
- 发表时间2016
- DOI10.1039/C5TC03766B
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