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Periodic trench region in LDMOS transistor: A new reliable structure with high breakdown voltage

Periodic trench region in LDMOS transistor: A new reliable structure with high breakdown voltage

Mehrad, Mahsa
  • 期刊名称Superlattices and Microstructures
  • 作者Mehrad, Mahsa
  • 卷第91卷
  • 印刷ISSN0749-6036
  • 文件大小1079.75KB
  • 发表时间2016-03
  • DOI10.1016/j.spmi.2015.12.041
  • 页码193-200
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