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Characterization of Single Bit and Multiple Cell Soft Error Events in Planar and FinFET SRAMs

Characterization of Single Bit and Multiple Cell Soft Error Events in Planar and FinFET SRAMs

Fang, Yi-Pin; Oates, Tony
  • 期刊名称IEEE Transactions on Device and Materials Reliability
  • 作者Fang, Yi-Pin; Oates, Tony
  • 印刷ISSN1530-4388
  • 电子ISSN1558-2574
  • 文件大小427.51KB
  • 发表时间2016
  • DOI10.1109/TDMR.2016.2535663
  • 页码1-1
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