Resistive switching memory behaviours of MoSe2 nano-islands array

• 期刊名称Journal of Materials Science: Materials in Electronics
• 作者Zhang, Xuejiao; Qiao, Haixia; Nian, Xiaofeng; Huang, Yong; Pang, Xiaofeng
• 印刷ISSN0957-4522
• 电子ISSN1573-482X
• 文件大小1783.34KB
• 发表时间2016-3-30
• DOI10.1007/s10854-016-4744-6