Effects of erbium doping of indium tin oxide electrode in resistive random access memory

Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.

期刊名称Applied Physics Express
作者Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
卷第9卷
期第3期
印刷ISSN1882-0778
电子ISSN1882-0786
文件大小1348.11KB
发表时间2016-03-01
DOI10.7567/APEX.9.034202

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Effects of erbium doping of indium tin oxide electrode in resistive random access memory