Reducing operation voltages by introducing a low-
<i>k</i>
switching layer in indium–tin-oxide-based resistance random access memory

Reducing operation voltages by introducing a low- k switching layer in indium–tin-oxide-based resistance random access memory

Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.

期刊名称Applied Physics Express
作者Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M.
卷第9卷
期第6期
印刷ISSN1882-0778
电子ISSN1882-0786
文件大小1609.98KB
发表时间2016-06-01
DOI10.7567/APEX.9.061501

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Reducing operation voltages by introducing a low- k switching layer in indium–tin-oxide-based resistance random access memory