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The effects of doping layer location on the electronic and optical properties of GaN step quantum well

The effects of doping layer location on the electronic and optical properties of GaN step quantum well

Dakhlaoui, Hassen

期刊名称Superlattices and Microstructures
作者Dakhlaoui, Hassen
卷第97卷
印刷ISSN0749-6036
文件大小513.18KB
发表时间2016-09
DOI10.1016/j.spmi.2016.07.018
页码439-447

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