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Improved n-channel Ge gate stack performance using HfAlO high-
              <i>k</i>
              dielectric for various Al concentrations

Improved n-channel Ge gate stack performance using HfAlO high- k dielectric for various Al concentrations

Kothari, Shraddha; Joishi, Chandan; Ghosh, Sayantan; Biswas, Dipankar; Vaidya, Dhirendra; Ganguly, Swaroop; Lodha, Saurabh
  • 期刊名称Applied Physics Express
  • 作者Kothari, Shraddha; Joishi, Chandan; Ghosh, Sayantan; Biswas, Dipankar; Vaidya, Dhirendra; Ganguly, Swaroop; Lodha, Saurabh
  • 卷第9卷
  • 期第7期
  • 印刷ISSN1882-0778
  • 电子ISSN1882-0786
  • 文件大小7919.49KB
  • 发表时间2016-07-01
  • DOI10.7567/APEX.9.071302
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