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Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55μm

Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55μm

I. Guizani, ; Bilel, C.; Habchi, M.M.; Rebey, A.; El Jani, B.

期刊名称Thin Solid Films
作者I. Guizani, ; Bilel, C.; Habchi, M.M.; Rebey, A.; El Jani, B.
印刷ISSN0040-6090
文件大小659.31KB
发表时间2016-9
DOI10.1016/j.tsf.2016.09.056

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