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[IEEE 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Taipei, Taiwan (2016.8.24-2016.8.26)] 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Electro-thermal-stress analysis of AlGaN/GaN HEMTs breakdown under intentional EMI

[IEEE 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Taipei, Taiwan (2016.8.24-2016.8.26)] 2016 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) - Electro-thermal-stress analysis of AlGaN/GaN HEMTs breakdown under intentional EMI

Zhou, Liang; San, Zhengwei; Mao, Jun-Fa
  • 作者Zhou, Liang; San, Zhengwei; Mao, Jun-Fa
  • 文件大小420.52KB
  • 发表时间2016
  • DOI10.1109/RFIT.2016.7578210
  • 页码1-3
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