AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates
Huang, Yuliang; Zhang, Lian; Cheng, Zhe; Zhang, Yun; Ai, Yujie; Zhao, Yongbing; Lu, Hongxi; Wang, Junxi; Li, Jinmin
- 期刊名称Journal of Semiconductors
- 作者Huang, Yuliang; Zhang, Lian; Cheng, Zhe; Zhang, Yun; Ai, Yujie; Zhao, Yongbing; Lu, Hongxi; Wang, Junxi; Li, Jinmin
- 卷第37卷
- 期第11期
- 印刷ISSN1674-4926
- 文件大小2401.41KB
- 发表时间2016-11
- DOI10.1088/1674-4926/37/11/114002