[IEEE 2016 IEEE International Telecommunications Energy Conference (INTELEC) - Austin, TX, USA (2016.10.23-2016.10.27)] 2016 IEEE International Telecommunications Energy Conference (INTELEC) - GaN on silicon E-HEMT and pure silicon MOSFET in high frequency switching of EV DC/DC converter: A comparative study in a nissan leaf

• 作者Attia, Y.; Youssef, M.
• 文件大小857.46KB
• 发表时间2016
• DOI10.1109/intlec.2016.7749112
• 页码1-6