Design guidelines for GaSb/InAs TFET exploiting strain and device size
- 期刊名称Solid-State Electronics
- 作者Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
- 印刷ISSN0038-1101
- 文件大小588.22KB
- 发表时间2016-11
- DOI10.1016/j.sse.2016.11.011
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