Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

期刊名称Applied Physics Letters
作者Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan
卷第109卷
期第1期
印刷ISSN0003-6951
电子ISSN1077-3118
文件大小1146.87KB
发表时间2016-07-04
DOI10.1063/1.4955452

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