Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures

Asahara, Ryohei; Nozaki, Mikito; Yamada, Takahiro; Ito, Joyo; Nakazawa, Satoshi; Ishida, Masahiro; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

期刊名称Applied Physics Express
作者Asahara, Ryohei; Nozaki, Mikito; Yamada, Takahiro; Ito, Joyo; Nakazawa, Satoshi; Ishida, Masahiro; Ueda, Tetsuzo; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji
卷第9卷
期第10期
印刷ISSN1882-0778
电子ISSN1882-0786
文件大小4412.67KB
发表时间2016-10-01
DOI10.7567/APEX.9.101002

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Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal–oxide–semiconductor structures