[IEEE 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2016.8.3-2016.8.5)] 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Solar-blind deep-ultraviolet photodetector based on the β-Ga2O3 thin film grown on annealed c-plane sapphire substrate
Wu, Z. H.; Qian, L. X.; Sheng, T.; Zhang, Y. Y.; Liu, X. Z.
- 作者Wu, Z. H.; Qian, L. X.; Sheng, T.; Zhang, Y. Y.; Liu, X. Z.
- 文件大小487.40KB
- 发表时间2016
- DOI10.1109/EDSSC.2016.7785215
- 页码82-85