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[IEEE 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2016.8.3-2016.8.5)] 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Implantation-free 2-step junction termination extension with 2-space modulated buffer trench regions for UHV 4H-SÍC GTO thyristors

[IEEE 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2016.8.3-2016.8.5)] 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Implantation-free 2-step junction termination extension with 2-space modulated buffer trench regions for UHV 4H-SÍC GTO thyristors

Zhou, Cai-Neng; Wang, Yan; Yue, Rui-Feng; Dai, Gang; Li, Jun-Tao

作者Zhou, Cai-Neng; Wang, Yan; Yue, Rui-Feng; Dai, Gang; Li, Jun-Tao
文件大小1367.72KB
发表时间2016
DOI10.1109/edssc.2016.7785296
页码414-417

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