Nanopipe formation as a result of boron impurity segregation in gallium nitride grown by halogen-free vapor phase epitaxy
- 期刊名称Journal of Applied Physics
- 作者Kimura, Taishi; Aoki, Yuko; Horibuchi, Kayo; Nakamura, Daisuke
- 卷第120卷
- 期第24期
- 印刷ISSN0021-8979
- 电子ISSN1089-7550
- 文件大小3541.01KB
- 发表时间2016-12-28
- DOI10.1063/1.4972472
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