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InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure

InAs/GaSb-on-insulator single channel complementary metal-oxide-semiconductor transistors on Si structure

Yokoyama, Masafumi; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi
  • 期刊名称Applied Physics Letters
  • 作者Yokoyama, Masafumi; Yokoyama, Haruki; Takenaka, Mitsuru; Takagi, Shinichi
  • 卷第109卷
  • 期第21期
  • 印刷ISSN0003-6951
  • 电子ISSN1077-3118
  • 文件大小2084.85KB
  • 发表时间2016-11-21
  • DOI10.1063/1.4968187
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