CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

Varavin, V. S.; Vasilyev, V. V.; Guzev, A. A.; Dvoretsky, S. A.; Kovchavtsev, A. P.; Marin, D. V.; Sabinina, I. V.; Sidorov, Yu. G.; Sidorov, G. Yu.; Tsarenko, A. V.; Yakushev, M. V.

期刊名称Semiconductors
作者Varavin, V. S.; Vasilyev, V. V.; Guzev, A. A.; Dvoretsky, S. A.; Kovchavtsev, A. P.; Marin, D. V.; Sabinina, I. V.; Sidorov, Yu. G.; Sidorov, G. Yu.; Tsarenko, A. V.; Yakushev, M. V.
卷第50卷
期第12期
印刷ISSN1063-7826
电子ISSN1090-6479
文件大小212.64KB
发表时间2016-12
DOI10.1134/S1063782616120265
页码1626-1629

发现好书期刊，享受阅读乐趣

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures