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[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Growth and characterization of (Zn, Sn, Ga)As<inf>2</inf> thin films grown on GaAs(001) substrate by molecular beam epitaxy

[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Growth and characterization of (Zn, Sn, Ga)As2 thin films grown on GaAs(001) substrate by molecular beam epitaxy

Toyota, Hideyuki; Terauchi, Tatsuya; Hidaka, Shiro; Kato, Takahiro; Uchitomi, Naotaka
  • 作者Toyota, Hideyuki; Terauchi, Tatsuya; Hidaka, Shiro; Kato, Takahiro; Uchitomi, Naotaka
  • 文件大小18.61KB
  • 发表时间2016
  • DOI10.1109/iciprm.2016.7528601
  • 页码1-1
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