[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Trapping and detrapping of oxide border traps in Al2O3 gate dielectric in MoS2 n-MOSFETs under PBTI stress
Hui-Wen Yuan, ; Hui Shen, ; Jun-Jie Li, ; Jinhai Shao, ; Daming Huang, ; Yi-Fang Chen, ; Wang, P. F.; Ding, S. J.; Chin, Albert; Ming-Fu Li,
- 作者Hui-Wen Yuan, ; Hui Shen, ; Jun-Jie Li, ; Jinhai Shao, ; Daming Huang, ; Yi-Fang Chen, ; Wang, P. F.; Ding, S. J.; Chin, Albert; Ming-Fu Li,
- 文件大小811.11KB
- 发表时间2016
- DOI10.1109/icsict.2016.7998957
- 页码481-483