Evidence of Supercoupling Effect in Ultrathin Silicon Layers Using a Four-Gate MOSFET
- 期刊名称IEEE Electron Device Letters
- 作者Cristoloveanu, S.; Athanasiou, S.; Bawedin, M.; Galy, Ph.
- 卷第38卷
- 期第2期
- 印刷ISSN0741-3106
- 电子ISSN1558-0563
- 文件大小855.39KB
- 发表时间2017-2
- DOI10.1109/LED.2016.2637563
- 页码157-159
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