N Electron Blocking Layer
- 期刊名称IEEE Transactions on Electron Devices
- 作者Lin, Zhiting; Wang, Haiyan; Chen, Shuqi; Lin, Yunhao; Yang, Meijuan; Li, Guoqiang; Xu, Bingshe
- 卷第64卷
- 期第2期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小2251.98KB
- 发表时间2017-2
- DOI10.1109/TED.2016.2637407
- 页码472-480
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