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Electrical properties of Si-doped GaN prepared using pulsed sputtering

Arakawa, Yasuaki; Ueno, Kohei; Imabeppu, Hideyuki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

期刊名称Applied Physics Letters
作者Arakawa, Yasuaki; Ueno, Kohei; Imabeppu, Hideyuki; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi
卷第110卷
期第4期
印刷ISSN0003-6951
电子ISSN1077-3118
文件大小667.82KB
发表时间2017-01-23
DOI10.1063/1.4975056