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[IEEE 2017 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2017.2.5-2017.2.9)] 2017 IEEE International Solid-State Circuits Conference (ISSCC) - 25.2 A 10MHz 3-to-40V V<inf>IN</inf> tri-slope gate driving GaN DC-DC converter with 40.5dBµV spurious noise compression and 79.3% ringing suppression for automotive applications

[IEEE 2017 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2017.2.5-2017.2.9)] 2017 IEEE International Solid-State Circuits Conference (ISSCC) - 25.2 A 10MHz 3-to-40V VIN tri-slope gate driving GaN DC-DC converter with 40.5dBµV spurious noise compression and 79.3% ringing suppression for automotive applications

Ke, Xugang; Sankman, Joseph; Chen, Yingping; He, Lenian; Ma, D. Brian
  • 作者Ke, Xugang; Sankman, Joseph; Chen, Yingping; He, Lenian; Ma, D. Brian
  • 文件大小27733.25KB
  • 发表时间2017
  • DOI10.1109/ISSCC.2017.7870445
  • 页码430-431
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