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[IEEE 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - Phoenix, AZ, USA (2017.1.15-2017.1.18)] 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - A 20–30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

[IEEE 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - Phoenix, AZ, USA (2017.1.15-2017.1.18)] 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - A 20–30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

Chen, Cuilin; Xu, Xiao; Yang, Xin; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko
  • 作者Chen, Cuilin; Xu, Xiao; Yang, Xin; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko
  • 文件大小683.60KB
  • 发表时间2017
  • DOI10.1109/SIRF.2017.7874379
  • 页码88-90
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