Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation
- 期刊名称Applied Physics Letters
- 作者Katsuno, Takashi; Manaka, Takaaki; Soejima, Narumasa; Iwamoto, Mitsumasa
- 卷第110卷
- 期第9期
- 印刷ISSN0003-6951
- 电子ISSN1077-3118
- 文件大小1694.24KB
- 发表时间2017-02-27
- DOI10.1063/1.4977084
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