Solution-processed high-mobility neodymium-substituted indium oxide thin-film transistors formed by facile patterning based on aqueous precursors

Lin, Zhenguo; Lan, Linfeng; Sun, Sheng; Li, Yuzhi; Song, Wei; Gao, Peixiong; Song, Erlong; Zhang, Peng; Li, Meiling; Wang, Lei; Peng, Junbiao

期刊名称Applied Physics Letters
作者Lin, Zhenguo; Lan, Linfeng; Sun, Sheng; Li, Yuzhi; Song, Wei; Gao, Peixiong; Song, Erlong; Zhang, Peng; Li, Meiling; Wang, Lei; Peng, Junbiao
卷第110卷
期第13期
印刷ISSN0003-6951
电子ISSN1077-3118
文件大小1278.67KB
发表时间2017-03-27
DOI10.1063/1.4979318

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