Effect of occupation of the excited states and phonon broadening on the determination of the hot carrier temperature from continuous wave photoluminescence in InGaAsP quantum well absorbers

Esmaielpour, Hamidreza; Whiteside, Vincent R.; Hirst, Louise C.; Tischler, Joseph G.; Ellis, Chase T.; Lumb, Matthew P.; Forbes, David V.; Walters, Robert J.; Sellers, Ian R.

期刊名称Progress in Photovoltaics: Research and Applications
作者Esmaielpour, Hamidreza; Whiteside, Vincent R.; Hirst, Louise C.; Tischler, Joseph G.; Ellis, Chase T.; Lumb, Matthew P.; Forbes, David V.; Walters, Robert J.; Sellers, Ian R.
印刷ISSN1062-7995
文件大小1112.69KB
发表时间2017
DOI10.1002/pip.2890

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Effect of occupation of the excited states and phonon broadening on the determination of the hot carrier temperature from continuous wave photoluminescence in InGaAsP quantum well absorbers