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Advantages of InGaN/InGaN quantum well light emitting diodes: better electron-hole overlap and stable output

Advantages of InGaN/InGaN quantum well light emitting diodes: better electron-hole overlap and stable output

Gorai, Anup; Panda, Siddhartha; Biswas, Dipankar

期刊名称Optik - International Journal for Light and Electron Optics
作者Gorai, Anup; Panda, Siddhartha; Biswas, Dipankar
印刷ISSN0030-4026
文件大小701.85KB
发表时间2017-4
DOI10.1016/j.ijleo.2017.04.086

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