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Channel Mobility in GaN Hybrid MOS-HEMT Using SiO₂ as Gate Insulator

Fiorenza, Patrick; Greco, Giuseppe; Iucolano, Ferdinando; Patti, Alfonso; Roccaforte, Fabrizio

期刊名称IEEE Transactions on Electron Devices
作者Fiorenza, Patrick; Greco, Giuseppe; Iucolano, Ferdinando; Patti, Alfonso; Roccaforte, Fabrizio
印刷ISSN0018-9383
电子ISSN1557-9646
文件大小1483.88KB
发表时间2017
DOI10.1109/TED.2017.2699786
页码1-7