Impact of Traps and Strain on Optimized n- and p-Type TFETs Integrated on the Same InAs/AlGaSb Technology Platform
- 期刊名称IEEE Transactions on Electron Devices
- 作者Visciarelli, Michele; Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小1219.32KB
- 发表时间2017
- DOI10.1109/ted.2017.2711779
- 页码1-6