Graphene Quantum Dot (GQD)-Induced Photovoltaic and Photoelectric Memory Elements in a Pentacene/GQD Field Effect Transistor as a Nano-Probe of Functional Interface
- 期刊名称Journal of Physics D: Applied Physics
- 作者Kim, Youngjun; Cho, Seongeun; kim, hyeran; seo, soonjoo; lee, hyun uk; Lee, Jouhahn; Ko, Hyungduk; Chang, Mincheol; Park, Byoungnam
- 印刷ISSN0022-3727
- 电子ISSN1361-6463
- 文件大小664.54KB
- 发表时间2017-07-07
- DOI10.1088/1361-6463/aa7e3f
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