Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder

Hashimoto, Shuichiro; Yokogawa, Ryo; Oba, Shunsuke; Asada, Shuhei; Xu, Taiyu; Tomita, Motohiro; Ogura, Atsushi; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

期刊名称Journal of Applied Physics
作者Hashimoto, Shuichiro; Yokogawa, Ryo; Oba, Shunsuke; Asada, Shuhei; Xu, Taiyu; Tomita, Motohiro; Ogura, Atsushi; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu
卷第122卷
期第14期
印刷ISSN0021-8979
电子ISSN1089-7550
文件大小2783.82KB
发表时间2017-10-14
DOI10.1063/1.4999195

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Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder