A numerical analysis and experimental demonstration of a low degradation conductive bridge resistive memory device
- 期刊名称Journal of Applied Physics
- 作者Berco, Dan; Chand, Umesh; Fariborzi, Hossein
- 卷第122卷
- 期第16期
- 印刷ISSN0021-8979
- 电子ISSN1089-7550
- 文件大小5763.03KB
- 发表时间2017-10-28
- DOI10.1063/1.5008727
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