Mechanism of oxide thickness and temperature dependent current conduction in n + -polySi/SiO 2 /p-Si structures — a new analysis
- 期刊名称Journal of Semiconductors
- 作者Samanta, Piyas
- 卷第38卷
- 期第10期
- 印刷ISSN1674-4926
- 文件大小834.53KB
- 发表时间2017-10
- DOI10.1088/1674-4926/38/10/104001