[IEEE 2017 29th International Conference on Microelectronics (ICM) - Beirut, Lebanon (2017.12.10-2017.12.13)] 2017 29th International Conference on Microelectronics (ICM) - Characterization, modeling and comparison of 1/f noise in Si/SiGe:C HBTs issued from three advanced BiCMOS technologies

Seif, M.; Pascal, F.; Sagnes, B.; Elbeyrouthy, J.; Hoffmann, A.; Haendler, S.; Chevalier, P.; Gloria, D.

作者Seif, M.; Pascal, F.; Sagnes, B.; Elbeyrouthy, J.; Hoffmann, A.; Haendler, S.; Chevalier, P.; Gloria, D.
文件大小1032.95KB
发表时间2017
DOI10.1109/ICM.2017.8268847
页码1-4

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