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Silicon-Carbide technology of MESFETs-based power integrated circuits

Silicon-Carbide technology of MESFETs-based power integrated circuits

Mogniotte, Jean-Francois; Tournier, Dominique; Raynaud, Christophe; Lazar, Mihai; Planson, Dominique; Allard, Bruno
  • 期刊名称IEEE Journal of Emerging and Selected Topics in Power Electronics
  • 作者Mogniotte, Jean-Francois; Tournier, Dominique; Raynaud, Christophe; Lazar, Mihai; Planson, Dominique; Allard, Bruno
  • 印刷ISSN2168-6777
  • 电子ISSN2168-6785
  • 文件大小1505.07KB
  • 发表时间2017
  • DOI10.1109/JESTPE.2017.2778002
  • 页码1-1
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